2012-04-24· An ideal process for removing indium oxide from the indium bumps would reduce the oxide without attacking the indium metal. It is known that the use of a gas will not attack the indium metal, and toward this end hydrogen gas has been attempted.
In this study, plasma, thermal, and wet chemical methods were screened to determine their ability to remove indium oxide from indium bumps. A novel two-step plasma process using methane, argon, and hydrogen was developed that removes indium oxide from indium bumps after prolonged air exposure while maintaining a low sample temperature.
An ideal process for removing indium oxide from the indium bumps would be to induce thermal reduction in the oxide with some gaseous species, such as hydrogen, which will not attack the indium metal. Unfortunately, reduction in indium oxide to indium metal in molecular hydrogen requires temperatures in excess of 380 ° C to achieve a measurable reaction rate. 4 4.
Indium is a commonly used metal for sealing, bonding, and soldering due to its good malleability and ductility even at cryogenic temperatures. The The effects of hydrogen radical treatment on indium surface oxide removal were evaluated by the spreading ratio test of indium balls (diameter, 300µm;
Indium Fluoride is a water insoluble Indium source for use in oxygen-sensitive applications, such as metal production. Fluoride compounds have diverse applications in current technologies and science, from oil refining and etching to synthetic organic chemistry and the manufacture of pharmaceuticals. Magnesium Fluoride, for example, was used by researchers at the Max Planck Institute for ...
A process for removing indium oxide from indium bumps in a flip-chip structure to reduce contact resistance, by a multi-step plasma treatment. A first plasma treatment of the indium bumps with an argon, methane and hydrogen plasma reduces indium oxide, and a second plasma treatment with an argon and hydrogen plasma removes residual organics.
Some materials such as Indium form native oxides at room temperature which must be removed before bonding. It is therefore necessary to remove and prevent oxides in situ to achieve proper joining. It is therefore necessary to remove and prevent oxides in situ to achieve proper joining.
A method of removing at least one oxide from a surface of a body of semiconductor material is disclosed. The method includes arranging the body in a vacuum chamber and maintaining a temperature of the body in the vacuum chamber within a predetermined range, or substantially at a predetermined value, while exposing said surface to a flux of indium atoms. Corresponding methods of processing …
ETCHING INDIUM TO REMOVE OXIDES ® ... remove the 80-100 Angstroms of oxide that form on the surface. 3) Thoroughly rinse twice in DI water. 4) Rinse off the water with acetone (preferred) or iso-propyl alcohol. 5) Blow-dry with dry nitrogen. Note: Because this procedure slightly etches the metallic surface exposing a larger surface area to oxi- dation, only the indium that is going to be used ...
Indium tin oxide (ITO) is the most prominent transparent conductive oxide today. Nevertheless, efforts are made to replace ITO with aluminum-doped zinc oxide (AZO). Both materials can be synthesized by HIPIMS with unique or superior properties to state of the art.